Abstract
It is now possible to grow graphene nanoribbons with atomically precision by employing on-surface organic synthesis techniques [1]. Bottom-up synthesized graphene nanoribbons have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunneling FETs. However, the short length, wide band gap, and random orientation of GNRs have prevented the fabrication of devices with the expected performance and switching behavior [2]. In this talk, I will discuss our progress in integrating bottom-up synthesized graphene nanoribbons into devices. I will show our results on high on-current and high on-off ratio FETs with a 9-atom wide graphene nanoribbon as the channel material [3]. Furthermore, we also fabricated devices with parallel arrays of GNRs transferred from single crystal Au(788), which greatly improves device yield. Finally, I will discuss how we can use graphene nanoribbon heterostructures to design a low-voltage switch [4].
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