Abstract
ABSTRACT6H-SiC epitaxial layers with a background n-type dopant concentration of 1 × 1016/cm3 were hot implanted to doses ranging from 4.0 × 1013 to 1.8 × 1014 Al ions/cm2 at 65, 135, and 220 keV to achieve a box-type implant distribution to a depth of 300 nm. Electrical activation of dopants was carried out using a proximity annealing method at 1500°C in a buffer environment to retard surface degradation of the SiC samples. Measurements using atomic force microscopy illustrated the morphological stability of the SiC surface during the high-temperature annealing. Transmission line measurements showed some degree of dopant activation. Characterization of fabricated p-n junction diodes demonstrated p-type conduction in the aluminum-implanted SiC samples.
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