P-type doping induced performance improvement of two-dimensional SiC transistors with 1T-phase MoS2 electrode

Abstract

Using nonequilibrium Green's functions in combination with the density-functional theory, we explored the performance of two-dimensional (2D) SiC Schottky-Barrier field effect transistor (SBFET) with different concentration of p-type doping in source/drain region. The corresponding hole Schottky barrier height would be gradually reduced with the increasing of the p-type doping concentration. The ON-state current of SBFETs with different p-type doping concentration (1×1020 cm−2, 5×1020 cm−2, 1×1021 cm−2, 5×1021 cm−2) are 1184 μA/μm, 1263 μA/μm, 1659 μA/μm, 1200 μA/μm, respectively, which could satisfy the ITRS (International technology road-map for semiconductors, 2013 version) high-performance (HP) standards for the 2028 horizon. In addition, the intrinsic gate capacitance, the dynamic power indicator and the intrinsic transistor delay time of p-type doping SBFETs with different doping concentration all satisfy the performance requirement of HP transistor outlined by ITRS.