Abstract
We have studied B ion implantation at 400 °C into undoped homoepitaxial chemical vapor deposition diamond films and high-pressure and high-temperature (HPHT) synthetic IIa substrates. The highest Hall mobility at room temperature is 268 cm 2/Vs among B implanted homoepitaxial films, while it is 38 cm 2/Vs for the B implanted HPHT synthetic IIa substrate. The present result reveals that the quality of a doped layer is strongly dependent upon that of a diamond substrate employed for ion implantation.
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