Abstract
The electrical properties of doped and undoped chemical vapour deposition (CVD) diamond films determine their potential active or passive applications in electronic devices. Polycrystalline CVD diamond films may include high defect densities as well as unintentional dopants such as hydrogen, which are a sensitive function of deposition parameters. We investigated the electrical conductivity of doped and undoped CVD diamond films deposited onto silicon or alumina by a variety of methods. The behaviour of these films before and after simple heat treatments is reported. Ion implantation was used successfully to dope bulk diamond. We report on a preliminary investigation of boron implantation into CVD diamond films.
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