P-type conduction in arsenic-doped ZnSe nanowires

Abstract

Reliable p-type conduction was achieved in ZnSe nanowires (NWs) synthesized by introducing Zn3As2 as a dopant source. The crystal structure and orientation of NWs remained unchanged after doping. The electrical and transport properties of As-doped ZnSe NWs were investigated via the characteristics of NW-based field-effect transistors. The origin of p-type conduction in ZnSe NWs is attributed to the formation of substitutional AsSe and AsZn−2VZn complexes. Arsenic atoms were considered to incorporate into ZnSe lattices partly as As–H pairs; therefore postgrowth annealing could improve p-type conduction by dissociating As–H bonds and activating As acceptors.