P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition

Abstract

Amorphous vanadium oxide (VxOy) thin films were grown on SiO2 glass substrates by pulsed laser deposition at RT in high vacuum of 1.0 × 10−5 Pa. The electric conductivity of the film was increased from 0.34 S cm−1 at 323 K to 4.2 S cm−1 at 473 K, and the film showed positive Seebeck coefficient of 15 μV K−1 at 323 K and positive Hall voltage of 10 μV at RT, indicating p-type semiconductor. From ex situ X-ray photoelectron spectroscopy analysis, p-type amorphous VxOy thin films seemed to contain minor V4+ ions with a V4+/V5+ ratio of at least 0.2 at the surface.