P-n Type Heterostructures Based on N,N′-Dimethyl Perylene-Tetracarboxylic Acid Diimide

Abstract

Photovoltaic properties of new photosensitive p-n type heterostructures based on N,N′-dimethyl perylene-tetracarboxylic acid diimide and organic [pentacene, hexathiopentacene, lead phthalocyanine] and inorganic [CuI] semiconductors are investigated. The basic attention is focused on the influence of energy diagram parameters and substrate temperatures (T s) during the deposition on the photosensitivity of heterostructures. The maximal photovoltage, minimal surface recombination rate, and structural homogeneity of layers for the heterostructures were obtained at T s = 370 K. The comparison of the obtained results with energy diagram parameters according to the Anderson model (without taking surface states into account) shows a qualitative agreement for two-layered organic p-n heterojunctions.