PN junction formation in 6HSiC by acceptor implantation into n-type substrate

Abstract

A1 and B implantations were performed into n-type 6H-bulk SiC and epitaxial layers at both room temperature and 850°C. Annealings were performed in the temperature range of 1100–1650°C in a SiC crucible. For single-energy implants, the implant gettered to the 0.7 R p location for annealing temperatures ≥1400°C. For the 850°C implanted samples the RBS yield in the annealed material is comparable to the yield in the as-grown material, indicating a good lattice recovery. A maximum activation of 18% for Al-implanted samples was observed. PN junction diodes were made using Al-implanted material.