Abstract
A novel boron-diffusion process is described for the fabrication of high-efficiency P+/N silicon solar cells. Over the range of diffusion parameters investigated this diffusion process results in a boron-rich surface layer and shallow junctions (0.15–0.4 μm) having two properties important to the formation of high-efficiency solar cells—relatively low values of sheet resistance (35–140 Ω/⧠) which facilitates the front-surface grid-metal design and large resultant lifetimes approaching 60 μs. The characteristics of P+/N solar cells, fabricated using this diffusion process in single-crystal (CZ) silicon wafers, having AM1 efficiencies ranging from 14 to 17% are presented.
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