Abstract
A novel boron-diffusion process is described for the fabrication of high-efficiency P+/N silicon solar cells. Over the range of diffusion parameters investigated this diffusion process results in a boron-rich surface layer and shallow junctions (0.15–0.4 μm) having two properties important to the formation of high-efficiency solar cells—relatively low values of sheet resistance (35–140 Ω/⧠) which facilitates the front-surface grid-metal design and large resultant lifetimes approaching 60 μs. The characteristics of P+/N solar cells, fabricated using this diffusion process in single-crystal (CZ) silicon wafers, having AM1 efficiencies ranging from 14 to 17% are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
