Abstract
A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950°C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 1023atoms/cm3. BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 1.5–2.0, and the contact resistance of 0.8mΩcm2.
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