Abstract
I–VandL–Icharacteristics as well as photocurrent in monolithic p‐InAsSbP/n‐InAs double heterostructure (λ = 3.4 μm) with several mesas/individual diodes grown onto a single n+‐InAs substrate have been measured at an activation of one of the diodes at ambient temperature in the presence of water, ethanol, and H20 + C2H5OH mixture at the n+‐InAs substrate surface. Adequately sufficient photocurrent values, the evidence for the absorption of internally reflected infrared radiation at the n+‐InAs substrate/liquid interface together with the correlation between the photocurrent and liquid chemical composition indicate the possibility of developing p‐InAsSbP/n‐InAs double heterostructures into a miniature monolithic “on‐chip” evanescent wave sensor of different liquids.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
