Abstract
Our work on MBE growth of ZnSe doped with elemental lithium and sodium sources is presented. Lithium doping has resulted in low resistivity p-ZnSe with uncompensated acceptor concentrations in excess of 5 × 10 16 cm −3 (resistivity as low as 2.9 Ω cm). Variations of the film properties with growth conditions, as well as some potential problems involving the formation of electrical contacts, are discussed. As yet we have not been able to achieve p-type conversion of the ZnSe films using a sodium doping source. Photoluminescence measurements suggest the possible association of Na with some type of structural defect. Possible reasons for the observed differences between the Li and Na dopants, as well as the prospects for future success in doping of ZnSe using Group I elements, are discussed.
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