Abstract

We present computer simulation results for the images of various types of structural defects in 6H-SiC and Si single crystals with taking into account noise factors (background heterogeneity and contrast graininess). If we know the parameters used to simulate the image, we can increase the reliability of defect identification and location in the single crystal’s bulk and find the quantitative and qualitative characteristics of defects by comparing the experimental and theoretical noise contrast.

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