Abstract
The formation and properties of (110)-textured P-doped microcrystalline CVD diamondwere studied. Based on several microscopy techniques, with a special emphasis on electronbackscattered diffraction, a detailed determination of the grain orientations with respect tothe exact [110] axis is given. The different orientations present in the film, incombination with low phosphine concentrations in the gas phase, lead to a variation in Pincorporation that can vary over three orders of magnitude, as determined withcathodoluminescence mapping. The role of the surface morphology in the observation ofthese large incorporation differences is explained. Hall measurements confirm that thefilms are n-type conductive with a thermal activation energy of 0.56 eV. Based onB-doped substrates, pn junctions were created, showing a rectification ratio of nearly104 at ± 25 V.
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