Abstract
A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO 2 , deposited at 215°C. The MOS transistor is characterized by a threshold voltage of -3 V and an effective hole mobility of 330 cm2. V-1.s-1.
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