Abstract
The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.
Highlights
The conventional Si-based complementary logic integrated circuits (ICs) show the drawbacks of large leakage current and poor reliability in harsh environments[1]
The high-resolution X-ray diffraction (HRXRD) reciprocal space mapping (RSM) around (10–14)- plane reveals that the InGaN layer is totally strained on the GaN template, ensuring a good quality with large piezoelectric polarization field (Fig. 2(a))
The p-channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistors (FETs) (MOSFET) based on the 2DHG was first demonstrated by using Al2O3 as the gate dielectric
Summary
The conventional Si-based complementary logic integrated circuits (ICs) show the drawbacks of large leakage current and poor reliability in harsh environments[1]. III-Nitrides n-channel heterojunction FETs using polarization-induced two-dimensional electron gas (2DEG) have already been extensively investigated with lower specific on-resistance and higher electron mobility compared with those of Si-based FETs5. InGaN presents higher piezoelectric polarization coefficient compared to its III-nitrides rivals, which is beneficial for the generation and accumulation of high density 2DHG in conducting channel[21]. It has been theoretically simulated that for the compressively strained InGaN layer on the relaxed GaN template, holes can be confined close to the lower interface as a result of the dominant piezoelectric polarization field[22,23,24,25,26]. In order to improve the performance of InGaN-based p-channel FETs, the structural optimization for an effective 2DHG and novel device concepts are in great demand. The normal operation of MOSFET at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
