Low frequency noise in GaN-based transistors

M.E. Levinshtein,S.L. Rumyantsev,M.A. Khan,N. Pala,G. Simin,R. Gaska,X. Hu,M.S. Shur,J. Yang

doi:10.1109/cornel.2000.902547

Low frequency noise in GaN-based transistors

M.E. Levinshtein, S.L. Rumyantsev + Show 7 more

https://doi.org/10.1109/cornel.2000.902547

Copy DOI

Publication Date: Aug 7, 2000

Citations: 5

Affiliation: Rensselaer Polytechnic Institute, University of South Carolina

#Heterostructure Field Effect Transistors #Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Low-frequency noise in GaN/AlGaN heterostructure field effect transistors (HFETs) Metal-Oxide-Semiconductor HFETs (MOS-HFETs), metal semiconductor field effect transistors (MESFETs) and metal oxide semiconductor field effect transistors (MOSFETs) was measured at room and elevated temperatures as function of gate and drain voltages. Local levels with a large activation energy E/sub a//spl sim/0.8-1.0 eV have been observed in the measurement results. The noise might come from thin (30 nm) AlGaN barrier layer. The estimates of the level parameters based on this assumption resulted in reasonable values of capture cross section /spl sigma//sub n/=(10/sup -12/-10/sup -13/) cm/sup 2/.

Full Text