Abstract
Colloidal quantum wells (CQWs) are regarded as a frontier class of light-emitting diodes (LEDs) owing to their efficient and ultranarrow luminescence spectrum, directional emission, and high light extraction. However, CQW-LEDs with deep-red (> 660 nm) light emission, a vital part for high-definition color displays, optical medical, and horticultural lighting, remain a great challenge. Herein, high-efficiency deep-red CQW-LEDs are reported. With the enhancement of device engineering, the LED devices that based new CQW materials have shown high external quantum efficiency of 9.89%. Additionally, Mg-doped zinc oxide (ZnMgO) and In2O3 as electron transport layer (ETL) are introduced into CQW-LEDs for the first time, and the effect of different ETLs on carrier injection balance of CQW-LEDs is investigated. Furthermore, the first prototype active-matrix CQW-LED (AMCQW-LED) pixel circuit was constructed by connecting thin film transistor (TFT) source terminal with CQW-LED. The findings may not only begin the first step that TFT drives CQW-LED, but also reveal the carrier injection balance mechanism of CQW-LEDs, and can be further applied to other wavelengths of CQW-LEDs.
Published Version
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