Abstract
The photocurrent characteristics of amorphous MgInO (a‐MIO) thin film transistors (TFTs) under double sweep method are investigated. The gate voltage independent photocurrent characteristics under reverse gate voltage sweep in off‐state are observed and a current model is developed. As the wavelength decreases, the mobility‐lifetime (ηintμnτ) products extracted from the model increase on a logarithmic scale. The dynamic behavior of our TFTs is also investigated, showing that as the wavelength decreases from 400 nm to 310 nm, the decay time constant increases from 194 s to 302 s.
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