Abstract
AbstractAsymmetric slits were designed to make channel length (L) of thin film transistor (TFT) narrower. Amorphous silicon TFTs, having various channel lengths in the range of 1.5μm to 4μm, were successfully fabricated by optimizing two different slit widths beyond its own resolution limitation of a exposure system. Also, characteristics of TFTs having channel length below 4μm were investigated in this paper.
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