Abstract
We studied the effect of a‐IGZO thickness (tIGZO) on device uniformity and drain current (ID) of a‐IGZO thin‐film‐transistors (TFTs) driven by the single gate (SG) and dual‐gate driving (DG‐driving). Numerical simulation using fitting density‐of‐states (DOS) exhibits ~5 times larger ID and excellent uniformity with DG‐driving TFTs for a‐IGZO tIGZO<20 nm than SG‐TFT and enables the opportunity of high yield backplanes using DG‐TFTs for next generation high‐performance display applications.
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