Abstract
AbstractWe have suggested and developed a novel 6 photo‐mask process for the p‐channel poly‐Si thin film transistor TFT panel fabrication of active matrix organic light‐emitting diode AMOLED. By removing power line Vdd and bank photo process, we simplified the fabrication process from 8 to 6 mask steps. The p‐channel TFT fabricated by the 6 photo‐mask process had a field effect mobility of ∼80 cm2/Vsec, a sub‐threshold voltage swing of ∼0.3 V/dec., and a threshold voltage of ∼−2 V. Using the 6 photo‐mask process, we have successfully realized a 7‐inch WVGA 720×480 AMOLED panel, which is controlled by the voltage driving method.
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