Abstract
Abstract We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm 2 /V s and an off-state leakage current of 3.8×10 −11 A/μm at the drain voltage of −5 V and the gate voltage of 10 V.
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