Abstract
Enhancement of visible light response in InZnO (IZO) thin‐film transistors (TFTs) by hydrogen doping via Al2O3/SiO2 dielectric layer is investigated. The IZO TFTs with Al2O3/SiO2 dielectric show better visible light detection performance due to the introduction of subgap states by hydrogen doping. The photocurrent, photoresponsivity, detectivity, and external quantum efficiency of the device to blue light are respectively improved from 4.94 × 10−7 A to 1.97 × 10−6 A, 4.93 A/W to 19.71 A/W, 2.70 × 1012 Jone to 5.77×1012 Jone, and 13.60 to 54.32 after hydrogen doping. The persistent photoconductivity effect is also eliminated by applying a positive gate pulse voltage.
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