Abstract
Micro‐light‐emitting diode (Micro‐LED) is a new type of display device based on the third‐generation semiconductor gallium nitride (GaN) material. Micro‐LED has been applied to micro‐display technology due to its huge development potential. However, the EQE of Micro‐LEDs decreases with the decrease of the sidewall defects, and the passivation process can reduce the sidewall damage and improve the EQE. In this study, the fabrication technology of Micro‐LEDs was summarized and InGaN/GaN multi‐quantum wells (MQWs) Micro‐LEDs from 10 × 10 μm to 200 × 200 μm were fabricated. The improvement effect of different passivation materials on the electrical characteristics of Micro‐LEDs was explored. The results showed that passivation materials could effectively reduce the leakage of the device, reduce the sidewall damage and reduce the ideal factor, among which Si 3N 4 had the most obvious effect.
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