Abstract
AbstractWe have investigated the annealing behavior of a‐IGZO4 and found out that crystallization takes place at relatively low temperature of around 400°C when deposited by pure argon and then annealed in argon ambient. When deposited in 4%O2/Ar, on the other hand, only small network change is observed even after the annealing at 600°C in argon. These results show that oxygen vacancy, which is created during deposition and/or argon annealing, induces the lattice defects and helps create a crystalline phase of InGaZnO4.
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