Abstract
Zinc oxide films single, double and triple doped with arsenic, arsenic and nitrogen, arsenic, nitrogen and antimony, were grown by plasma assisted molecular beam epitaxy. Differently doped ZnO samples were post-growth annealed in oxygen or argon atmospheres. Incorporation of impurities into ZnO layers was confirmed by the results of secondary ion mass spectrometry measurements. The high resolution X-ray photoelectron spectroscopy (XPS) studies of arsenic 3d state revealed three arsenic states at the binding energy of ∼41 eV, 44.2 and 45.6 eV which we attribute to As deep acceptor, AsZn-2VZn shallow acceptor, and to AsZn donor, respectively. Concentration of the AsO species was found to be low in all samples. The relative fractions of arsenic chemical states in As-doped ZnO layers, were altered as a result of doping by antimony and/or nitrogen and post grown annealing in argon and oxygen atmosphere.
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