Abstract
A Corial Inductively Coupled Plasma Chemical Vapor Deposition (ICP‐CVD) system has been investigated to produce un‐doped and doped μ‐Si layers, as well as insulators, leading to a general capability of performing N and P type TFTs. This enables to develop rapid prototyping of TFTs. Resistivity of layers and TFT issues from ICP‐CVD have been electrically characterized.
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