Abstract
Low Temperature μ-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped μ-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 μm thick polyimide (PI) film have been tested to show the interest of the ICP-CVD μ-Si technology in the field of pressure sensors.
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