P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

Abstract

We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential. The stability and field-effect mobility of IGZO TFTs were significantly improved by controlling dipping time.