P‐4: TCAD Simulation of Hydrogen Diffusion Induced Bias Temperature Instability in a‐IGZO Thin‐Film Transistors

Abstract

Since the first introduction of amorphous IGZO TFTs, many researchers have investigated the temperature, bias, and luminous instability mechanisms of these devices. In this paper we have developed TCAD process and device models, including hydrogen diffusion and transport to explain degradation phenomena. Our approach has been validated using measurements data.