Abstract
AbstractIt was found that the extremely high contact resistance between Cu and ITO is caused by the damage of Cu during the via hole etching using SF6 and O2 plasma. TEM and XPS analysis indicate that an etching by‐product composed principally Cu2O was formed on the Cu film after the via etching. The result of a 3‐level 4‐factor Taguchi design showed that SF6/O2 ratio is the key parameter for the Cu dry etching. The Cu etching rate increases with decreasing the SF6/O2 ratio. By a via etching with high SF6/O2, Cu2O formation could be suppressed. The via contact resistance between Cu and ITO could be improved as same as that in the conventional Al gate metal.
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