Abstract
AbstractWe have examined the effect of a laser annealing ambient on the morphology and TFT performance of poly‐Si films. Oxygen in the ambient prevents the relaxation of surface roughness because of a thin oxide formed on the poly‐Si surface during laser irradiation. Poly‐Si films that crystallize in air (oxygen ambient) have larger gains, higher mobility, and rougher surfaces than films crystallized in a vacuum. To reduce this surface roughness, the surface oxide that formed during laser irradiation in air was removed and poly‐Si films were irradiated by the excimer laser in a vacuum again. The surface roughness drastically decreased from 13 nm to 1 nm while the grain size remained the same.
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