Abstract
Indium‐tin‐zinc oxide (ITZO) covered with a silicon oxide layer can be made conductive when subjected to an oxygen plasma treatment. The resulting resistivity is sensitive to the thickness of the cover oxide, the plasma excitation power, and the treatment time. With 280 nm of cover oxide and 10 mins of treatment, the lowest resistivity achieved is 1.2 mΩ∙cm in a plasma biased with a radio frequency excitation power of 100 W and an inductively coupled plasma excitation power of 2000 W. The treatment has been deployed to form the source/drain regions of a self‐aligned, top‐gate ITZO thin‐film transistor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
