Abstract
Mobile charge carriers can be generated in indium‐tinzinc oxide (ITZO) covered with a silicon oxide layer when subjected to an oxygen plasma treatment. The resulting resistivity is sensitive to the thickness of the cover oxide, the plasma excitation power, and the treatment time. With 280 nm of cover oxide and 10 mins of treatment, a low resistivity of 1.2 mΩ∙cm can be obtained in a plasma biased with a radio frequency excitation power of 100 W and an inductively coupled plasma excitation power of 2000 W. The treatment has been deployed to form the source/drain regions of a self‐aligned, top‐gate ITZO thin‐film transistor.
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