Abstract
AbstractHigh performance thin film transistor (TFT) arrays and circuits on engineered aluminum substrates are reported. Aluminum substrates were engineered to have a smooth insulating surface suitable for device fabrication upon them. Amorphous Indium Gallium Zinc Oxide (a‐IGZO) thin film transistors with an average field effect mobility of about 10 cm2/Vs, threshold voltage of 5 V, gate leakage current of 10−13 and on/off current ratio of 108 are demonstrated. Metal oxide transistors and circuits built on aluminum substrates open a route for future applications in large area flexible electronics.
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