Abstract
AbstractThe gate‐all‐around (GAA) fin‐like poly‐Si TFTs (FinTFTs) with multiple nanowire channels (MNCs) have been fabricated using a simple process to demonstrate high performance electrical characteristics. The fin‐like nanowire (NW) channel with high body thickness‐to‐width ratio (TFin/WFin), approximately equals to one, was realized only with a sidewall‐spacer formation. The unique suspending MNCs were also achieved to build the GAA structure. By the way, the GAA‐MNC FinTFTs showed outstanding three‐dimensional gate controllability and excellent electrical characteristics, which revealed a high ON/OFF current ratio (> 108), a low threshold voltage, a steep subthreshold swing, a near‐free drain‐induced barrier lowering and a good reliability. Therefore, such the high‐performance GAA‐MNC FinTFTs are very suitable for the applications in the system‐on‐panel (SOP) and three‐dimensional (3D) circuits.
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