P‐24: Low Power a‐Si:H TFT Gate Driver Circuit Employing Negative Turn Off Biasing

Abstract

AbstractNew a‐Si:H TFT gate driver circuit (ASG) for low power consumption is proposed and fabricated. For the first time, the proposed ASG can set TFT turn off voltage to the negative voltage rather than zero voltage that the conventional one uses, therefore, TFT leakage current can dramatically be reduced by 1/100. The size of TFT in new ASG, which discharges the leakage current, can be reduced so that the power consumption of new ASG is 43% of the conventional one.