Abstract
AbstractIn this work, we introduce a solution‐processed amorphous lanthanum indium zinc oxide (LIZO) TFT. From the characteristic variation of LIZO films according to La atomic percentage, it was confirmed that additive La atoms suppress the carrier generation by reducing oxygen vacancies. LIZO TFT was optimized at La 5% and its channel mobility, threshold voltage, s‐factor, and on‐off ratio were 2.64 cm2/Vs, 7.86 V, 0.6 V/dec, and ∼106, respectively. From these results, as substitution material of gallium in IGZO, lanthanum can be used for one of the candidates of carrier controller in IZO system.
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