Abstract
A fully self-aligned symmetric (FASt) LDD poly-Si transistor with short channel length was investigated for system-on-panel (SOP) display. FASt device has better performance than conventional LDD device, such as low threshold voltage of 0.61 V, high mobility of 125 cm2/V-s, low subthreshold swing of 140 mV/dec, high hot carrier stress endurance, and good device uniformity through whole glass substrate (620 mm × 750 mm). The excellent TFT electric characteristics permit the low driving voltage and narrow device dimension for the application of SOP display.
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