P‐2: Self‐Aligned Indium Gallium Zinc Oxide Thin‐Film Transistor with Source/Drain Regions Treated by NH3Plasma

Abstract

We present the impact of S/D contact formation by NH3, N2 and He plasma treatment, respectively. NH3 plasma treatment showed the best electrical properties during the unit test. Furthermore, the self‐aligned a‐IGZO TFT was used NH3 treatment, with a Vth shift of 0.2 V for the positive bias temperature stress.