Abstract
A series of gas barrier films on colorless polyimide substrates are studied at G4.5 backplane. The performances of barrier layer and TFT are identified by the film‐forming temperature, film structure, reliabilities, NBTIS and WVTR. The use of a SiNx‐SiOx (100nm–500nm) at PECVD temperature 285/295 °C resulted in the best light transmittance and reliabilities, and the electrical properties of a‐IGZO TFTs on glass is better than on cPI. The WVTR value of the SiNx‐SiOx (100nm–500nm) barrier layer on cPI are calculated to be 8.5×10−5 g/(m2‐day) at 37.8°C/100% RH, the NBTIS are improved after LLO and are deterioration after WVTR test. It is believed that the moisture and hydrogen diffusion from the underlying layers including cPI and environment atmosphere can be effectively suppressed by SiNx‐SiOx (100nm–500nm) barrier, and a flexible array backplane is demonstrated by means of these methods.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
