Abstract
In this paper, effects of boron channel doping on the low temperature poly‐silicon (LTPS) TFT were comprehensively investigated with respect to the density of state (DOS), generation lifetime and image sticking. The LTPS TFT and metal‐oxide‐semiconductor (MOS) capacitors fabricated in a way of varying boron doping, and flexible panels were characterized by I‐V and C‐V measurement. With increasing boron doping, the interface trap density (Nit) tends to increase. In fact, the DOS of p‐Si TFT reveals that the shallow level defects increase, whereas the deep level defects decrease with increasing dose. It is found that C‐t measurement is a useful tool for the generation lifetime (τg) associated with impurities of p‐Si. In turn, τg is inversely proportional to image sticking index that reflects one of critical attributes for display image performance and quality.
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