Abstract
Low voltage oxide thin film transistor (TFT) was developed using high dielectric gate insulator by thermal oxidation of tantalum metal. Thermal oxidation was carried out after deposition of tantalum layer by sputtering. Thermal grown tantalum oxide was analyzed by HR‐TEM and XPS. Through XPS analysis, it was confirmed that the binding energy of Ta4f indicates the formation of tantalum oxide. And the clear O1s peak has good Ta‐O bond. The transfer characteristic of the developed oxide transistor showed mobilities over 10 cm2/V·s and the inverter circuit operating below 1 V was achieved.
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