Abstract
AbstractWe developed a novel carbon nanotube field emitter arrays (CNT‐FEAs) with resist‐assisted patterning process by dc‐plasma enhanced chemical vapor deposition (PECVD). Through this method, we obtained a very strong bonded CNT with substrate. The CNTs were grown with −600 V bias to substrate electrode and +300 V bias to mesh grid being placed 10mm above the substrate holder electrode. The structure and electrical properties of the CNTs were strongly related to the growth time. The length was decreased after 80 minute and the diameter increases with growth time. An electron emission current increases with growth time. The growth mechanism, electron emission characteristics, and mechanical robustness were discussed.
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