Abstract
In this study, individually ballasted carbon nanotube (CNT) field emitter arrays (FEAs) using a doped silicon ballast resistor are designed and fabricated. Each CNT field emitter is in series with an n-type doped silicon resistor with 10μm in length, a doping concentration of 1014 cm−3 and a cross section area of 1 μm2 to limit FE current from a single emitter no more than 1.2 μΑ. A systematic study and discussion are described by fabricating and characterizing A CNT FEA with 8260 CNT emitters in a 1 mm2 octagonal area with an inter-emitter distance of 10 μm and a 10×10 CNT FEA. Benefitting from the saturation of drift velocity in doped silicon, the FE current can be successfully limited at a high current level without sacrificing the sensitivity and efficiency of electron extracting. The proposed approach is able to improve our CNT cathode reliability and stability for practical applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
