P‐141L: Late‐News Poster: Characterization of Physical Parameter‐Based Reliability on the Negative Bias Illumination Stress with Wavelength‐Dependence in Amorphous Silicon Thin‐Film Transistors

Abstract

AbstractWe characterized the subgap density‐of‐states (DOS)‐based reliability in hydrogenated amorphous silicon (a‐Si:H) thin film transistors (TFTs). Physical origins of the negative bias illumination stress (NBIS)‐induced threshold voltage shift (ΔVT) with wavelength‐dependence are quantitatively and systematically investigated. As a result, the photon energy is closely related to a creation of subgap states and the rate of ΔVOX (charge trapping into the gate insulator) /ΔVT is determined by the relation between the photon energy and the band offset. Our methodology is expected to be very useful for the development of next generation large‐area high performance active matrix liquid crystal display (AMLCD) technology.