Abstract
We have developed fast bend transition method of pi-cell in low temperature. This cell requires a transition of the liquid crystals (LC) from an initial splay state to bend transition before normal driving operation. This study analyzed the conditions under which this transition is generated in low temperature. Consequently, a method of fast bend transition by applying waveform that make the most of LC's dynamic response, using structure of top-gate electrode and surface alignment in Low Temperature Poly-Silicon (LTPS) Thin Film Transistor (TFT) cell was established.
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