Abstract
We have developed fast bend transition method of pi-cell in low temperature. This cell requires a transition of the liquid crystals (LC) from an initial splay state to bend transition before normal driving operation. This study analyzed the conditions under which this transition is generated in low temperature. Consequently, a method of fast bend transition by applying waveform that make the most of LC's dynamic response, using structure of top-gate electrode and surface alignment in Low Temperature Poly-Silicon (LTPS) Thin Film Transistor (TFT) cell was established.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
