Abstract
The improvement of the crystallinity of low‐temperature polysilicon (LTPS) will always lead the improvement of the performance of all kinds of displays and flexible electronics. In this paper, we investigate comprehensively the characteristics of TFTs fabricated by the Grain‐Boundary‐Free continuous‐wave laser lateral crystallizations (GB‐Free CLC) and we propose how to selectively fabricate TFTs to the laser scan for the channel regions, S/D wiring regions and contact regions..
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